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113 Computer Hardware - Memory Resources
4DS and SEMATECH Collaborate on Next Generation Non-Volatile Memory Devices
4DS, Inc., a Silicon Valley RRAM technology company, has joined SEMATECH's Front End Processes (FEP) to partner on efforts in non-volatile memory technology development.
April 12, 2011
2020 Software Ltd.
Offers memory for PCs, notebooks and servers.
Provides Products
A
Advanced MRAM Technology for Telecommunications Applications
Crocus Technology and SVTC Technologies have developed advanced MRAM products and started mass production.
May 4, 2011
Advantest Announces NAND Flash Test Solutions Total Device Test Support
Advantest Corporation today announced the availability of two new solutions for next-generation NAND flash memory test: the T5773 for package test and the HA5100CELL, based on the Harmonic architecture, for wafer test. Together, the tools offer total test support for high-capacity, high-speed next-generation NAND flash memory devices, from the front end to the back end.
July 11, 2011
Aehr Test Systems Receives Substantial Repeat Order for FOX-1 WaferPak Contactors
Aehr Test Systems declared that it has received further orders worth two million $ for FOX-1 WaferPak contactors and their support devices from a manufacturer of flash memory devices.
May 31, 2011
AMD launches Radeon-branded retail memory
There's no shortage of desktop memory suppliers in the market today, but AMD quietly joined the already-crowded market with a line of Radeon-branded memory products. Right now AMD is only selling 2GB RAM modules, and they're marketing them as being specifically useful for systems with AMD APU and CPUs already installed, although its difficult to believe they wouldn't function just as well in Intel-based systems.
August 8, 2011
Applied Materials Develops Innovative Systems to Improve the Performance of DRAM Chips
Applied Materials has developed new innovative systems to improve its new series of Dynamic random-access memory (DRAM) chips' performance. These systems such as the Applied Endura HAR Cobalt PVD system, the Applied Endura Versa XLR W PVD system, and the Applied Centura DPN HD system enhance the design of transistor and memory chips' contact areas.
July 8, 2011
Applied Materials Introduces Innovations for Building Faster DRAM Chips
Applied Materials, Inc. today announced a trio of new systems designed to boost performance in the next generations of DRAM chips. These innovative systems, which overcome key challenges in fabricating the transistor and contact areas of memory chips, include: the Applied Centura® DPN HDTM system to improve the gate insulator scaling; the Applied Endura® HAR Cobalt PVD system for high aspect ratio contact structures; and the Applied Endura® VersaTM XLR W PVD system for reduced gate stack resistance.
July 5, 2011
ASM International Qualifies New PEALD Oxide Application with Different Memory Manufacturer for the 2X nm Node
ASM International has received multiple orders for its plasma enhanced atomic layer deposition (PEALD) reactor from an Asian memory customer. The company qualified a PEALD oxide application with another memory manufacturer for the 2X nm node.
May 4, 2011
Atomic-level understanding of crystal ceramics could lead to low-power memory devices
Magnetic materials in which the north and south poles can be reversed with an electric field may be ideal candidates for low-power electronic devices, such as those used for ultra-high data storage. But finding a material with the right combination of magnetoelectric properties has proven a difficult challenge. Using a theoretical approach, Cornell theorists might have found one.
May 17, 2011
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Bison Components
Memory specialist that focuses on high-speed upgrades for notebooks and sun workstations.
Provides Products
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Centon Electronics, Inc
manufacturer and supplier of memory solutions for desktops, servers, printers, notebooks, embedded systems, and telecommunication devices.
Provides Information
Century Microelectronics
specializes in manufacturing DRAM memory modules including EDO, SDRAM, DDR, Rambus, and more.
Provides Products
Conducting ferroelectrics may be key to new electronic memory
Novel properties of ferroelectric materials discovered at the Department of Energy's Oak Ridge National Laboratory are moving scientists one step closer to realizing a new paradigm of electronic memory storage.
April 25, 2011
Corsair Announces 8GB DDR3 Memory Modules
Corsair has crammed 8 GB of DRAM onto one stick which in turn could provide up to 32 GB of DDR3 memory for desktops, and up to 16 GB of DDR3 memory on laptops, depending on the number of slots.
October 04, 2011
Corsair Announces Vengeance Low Profile High-Performance DDR3 Memory Kits
Corsair®, a worldwide designer and supplier of high-performance components to the PC gaming hardware market, today announced Vengeance LP, the latest addition to the award-winning Vengeance™ Series high-performance DDR3 line. Vengeance LP memory features heat spreaders with a reduced height of 1.03" (26.25 millimeters), compared to the standard height of 1.87" (47.37 millimeters). These modules are designed for high-performance systems with extra-large CPU coolers, small form factor system builds, or other space-constrained applications that prevent the use of standard Vengeance memory.
June 1, 2011
Corsair Announces World's First High-Performance Quad Channel 32GB Memory Kit
Corsair, a worldwide designer and supplier of high-performance components to the PC gaming hardware market, today announced the world's first high-performance quad channel Dominator 32GB DDR3 memory kit.
October 13, 2011
Corsair to Release New 4GB and 8GB Vengeance SODIMMs
Corsair is set to release its popular Vengeance DDR3 DIMM series in a SODIMM format for notebooks and laptops, which aren't as aggressive as its desktop counterparts.
December 7, 2011
Crucial Ballistix 8GB DDR3 2000MHz CL9 Memory Kit Review
In today's modern computers, large amounts of RAM are becoming ubiquitous. Due to the cheap price of system RAM, as well as the desktop PC's ever-growing need for memory, the vast majority of PCs available for purchase at retail outlets are equipped with at least 4GB of RAM. A quick check of Best Buy's website indicates 90% of the desktop systems they are currently selling are equipped with 4GB or more of RAM. More than a third of the systems they're selling come equipped with 6GB or more. Particularly when multitasking, RAM becomes an essential ingredient to a pleasant and responsive computing experience, so adding more RAM to a system is a quick and cheap way to help ensure slowdowns are avoided as much as possible.
October 11, 2011
Crucial.com: Glossary of Memory Terms
offers a series of computer memory related terms and definitions.
Provides Information
CST Inc,
Find out the most affordable way to test ram memory with memory tester and diagnostic software.
Provides Products
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Data density in random access memory could be radically increased
Scientists from the Forschungszentrum Jülich and the Max Planck Institute of Microstructure Physics in Halle have discovered the basis for the next generation of memory devices. In a ferroelectric material, they have, for the first time, been able to observe directly how dipoles, which store the information in this material, continuously rotate and therefore may be organised in circular structures.
March 28, 2011
Datec Electronics
International traders of IT components including processors, graphics and video cards and more.
Provides Products
DDR-Memory.com
provides information about DDR-based products such as motherboards and video cards.
Provides Information
Denali Software
offers memory solutions including modeling, simulation, verification, and design-chain management.
Provides a Service
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EDGE Tech Corp
EDGE Tech Corp, an ISO 9001:2008-certified company founded in 1986, is a leading supplier of computer memory upgrades, portable computing products, storage devices, and other experience-enhancing technology solutions.
Provides Products
Empower Labs, Inc.
provides semiconductor IC trading services and design and manufacturing solutions for memory upgrade products.
Provides Products
Engineers at Yale develop new type of mechanical memory
Research engineers at Yale University have succeeded in building a mechanical memory switch that is controlled and then read by lasers. In their paper published in Nature Nanotechnology, the team, led by professor Hong X. Tang, describe how they were able to use a laser to excite a small strand of solid silicon such that its bending properties that hold steady after the laser is turned off can be used as a memory device.
October 25, 2011
Enhanced Memory Systems
Manufacturer of esdram, pc-133 hsdram and edram.
Provides Products
Extremely fast MRAM data storage within reach
Magnetic Random Access Memories (MRAM) are the most important new modules on the market of computer storage devices. Like the well known USB-sticks, they store information into static memory, but MRAM offer short access times and unlimited writing properties. Commercial MRAMs have been on the market since 2005. They are, however, still slower than the competitors they have among the volatile storage media.
March 8, 2011
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Fundamental discovery could lead to better memory chips
Engineering researchers at the University of Michigan have found a way to improve the performance of ferroelectric materials, which have the potential to make memory devices with more storage capacity than magnetic hard drives and faster write speed and longer lifetimes than flash memory ("Spontaneous Vortex Nanodomain Arrays at Ferroelectric Heterointerfaces").
March 15, 2011
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Giant magnetoresistance emerged from non-magnetic phase-change solid-state memory
Junji Tominaga of the Nanoelectronics Research Institute of the National Institute of Advanced Industrial Science and Technology (AIST) and of Collaborative Research Team Green Nanoelectronics Center, AIST, and others discovered that a superlattice phase-change film multilayered using germanium-tellurium alloy sub-layers and antimony-tellurium alloy sub-layers with aligned orientation axes has a magnetoresistance effect in excess of 2000% in a temperature range from room temperature to around 150°C.
January 19, 2012
Good eggs - nanomagnets offer food for thought about computer memories
Magnetics researchers at the National Institute of Standards and Technology (NIST) colored lots of eggs recently. Bunnies and children might find the eggs a bit small—in fact, too small to see without a microscope. But these "eggcentric" nanomagnets have another practical use, suggesting strategies for making future low-power computer memories.
April 27, 2011
Graphene flash memory
Electronic memory devices are increasingly expected to provide not only greater storage density, but also faster access to information. As storage density increases, however, power consumption and unwanted heat generation also increase, and the fidelity of accessing the memory is frequently diminished. Various platforms exist to overcome these hurdles and, increasingly, graphene finds it way into computer memory technology. The most recent example are experiments that demonstrate the benefits of graphene as a platform for flash memory which show the potential to exceed the performance of current flash memory technology by utilizing the intrinsic properties of graphene.
September 6, 2011
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High-quality 64 kb ferroelectric NAND flash memory array
Shigeki Sakai and others of Ferroelectric Memory Group have developed a 64 kilobit (kb) memory cell array of a ferroelectric NAND flash memory where each memory cell is a ferroelectric gate field effect transistor, in collaboration with Ken Takeuchi, Graduate School of Engineering, the University of Tokyo.
January 17, 2012
Howstuffworks: Computer Memory
describes how all types of computer memory work.
Provides Information
Hybrid Memory Cube is 15x faster and 70% greener than DDR3
DRAM is starting to show its age a bit. It's been around since the 1970s, and we've come to the point where the processors in our high-performance computers (think server clusters) are starting to need a bit more than what DDR3 DRAM can deliver. Thanks to Samsung and Micron, there will soon be a kick-butt alternative: Hybrid Memory Cube.
October 07, 2011
Hynix Semiconductor Joins SEMATECH's 3D Interconnect Program at UAlbany NanoCollege
Hynix Semiconductor Inc. (Hynix), a world-leading memory supplier offering Dynamic Random Access Memory chips (DRAMs) and Flash memory chips, and SEMATECH today announced Hynix has become a member of SEMATECH's 3D Interconnect program at the College of Nanoscale Science and Engineering (CNSE) of the University at Albany.
March 8, 2011
HyperX Genesis DDR3 Memory is Here!
HyperX DDR3 memory; the latest generation of DDR memory technology. Like all Kingston HyperX products, DDR3 modules are specifically engineered and designed to meet the rigorous requirements of PC enthusiasts. DDR3 memory offers faster speeds, lower latencies, higher data bandwidths and lower power consumption than DDR2. HyperX DDR3 modules are available in single, dual and triple-channel memory kits.
March 8, 2011
I
IBM scientists demonstrate computer memory breakthrough with phase-change memory
For the first time, scientists at IBM Research have demonstrated that a relatively new memory technology, known as phase-change memory (PCM), can reliably store multiple data bits per cell over extended periods of time ("Drift-Tolerant Multilevel Phase-Change Memory"). This significant improvement advances the development of low-cost, faster and more durable memory applications for consumer devices, including mobile phones and cloud storage, as well as high-performance applications, such as enterprise data storage.
June 30, 2011
Imec achieves breakthroughs in enabling future DRAM and RRAM
In the frame of its research on future memory architectures, imec has made breakthroughs for both DRAM and RRAM memories. For DRAM, MIMcap (metal-insulator-metal capacitor) was established as a clear candidate for 1X DRAM scaling. Imec demonstrated a record low leakage current and was able to explain the mechanism for leakage reduction, showing the path for further potential improvement. For Resistive RAM (RRAM), imec built a model to understand the properties of the filaments that result in a stable RRAM operation. Such fundamental understanding of the filament properties is key to bridge the gap in the development of RRAM as a successor memory technology.
July 12, 2011
Intel and Micron Receive Most Innovative Flash Memory Technology Award
Intel Corporation and Micron Technology, Inc. received the Most Innovative Flash Memory Technology award Aug. 10 at the 2011 Flash Memory Summit for the companies' industry-leading 20 nanometer (nm) NAND Flash memory process technology.
August 13, 2011
Interconnect Program at NanoCollege Addresses Infrastructure Issues
Hynix Semiconductor, a company developing Dynamic Random Access Memory chips (DRAMs) and flash memory chips, and SEMATECH recently declared that Hynix is now a member of SEMATECH's three-dimensional Interconnect program at the College of Nanoscale Science and Engineering (CNSE) in the University at Albany.
March 14, 2011
Irresistible memory
Computing technology is currently based on two types of memory: the fast, volatile memory that is used to run applications, and the slower, non-volatile memory used for long-term data storage. The development of fast non-volatile memory to serve both functions could therefore lead to simpler and more powerful electronics. Myoung-Jae Lee and colleagues at Samsung Electronics and Sejong University in Korea have now taken a step towards realizing such a universal type of non-volatile memory with their development of fast, durable resistance-change memory.
October 11, 2011
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Kentron Technologies, Inc.
Specializing in the design, engineering and manufacturing of next generation high-density memory modules.
Provides Products
Kilopass Introduces Industry's First Embedded Multi-Time Programmable Non-Volatile Memory in 40nm Logic CMOS
Kilopass Technology, Inc., a leading provider of semiconductor logic non-volatile memory (NVM) intellectual property (IP), today unveiled Itera, the industry's first and only embedded multi-time programmable (MTP) NVM in 40nm, during the Linley Tech Mobile Conference. Using Itera, system-on-chip (SoC) designers can achieve significantly lower costs (70% less), higher performance (24X increase), and improved integration by replacing external serial EEPROM and NOR flash in high-volume mobile and consumer applications. Implemented in standard CMOS with no additional process steps or wafer process adders, Itera provides up to 1 megabit (Mb) of storage capacity and 1024 cycles of re-programmability in applications such as time stamp, key revocation, firmware updates, and trimming adjustments.
April 19, 2011
Kingston HyperX Memory Review
Kingston recently announced the availability of its new HyperX Plug and Play High Performance Memory for notebooks. The industry's first memory modules with "Sandy Bridge Ready Frequencies" for Intel's latest generation of processors, the HyperX Plug and Play Memory uses JEDEC-compliant 1600MHz and 1866MHz values. We decided to take a closer look at this high-performance RAM to see what a typical laptop user can expect if they simply "plug and play."
May 2, 2011
Kingston Launches New HyperX Genesis Kits
Kingston, the independent world leader in memory products, today announced a range of HyperX® Genesis memory in 8GB, 16GB and 32GB kits to support the new Intel® Sandy Bridge-E X79 quad-channel processors and X79 Express-based motherboards. Kingston® HyperX Genesis is the perfect solution for enthusiasts who require 4x raw performance increases afforded by quad channel over single channel solutions.
November 14, 2011
Kingston Technology
Manufacturer of memory products for desktops, notebooks, servers, and workstations.
Provides Products
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Leti announces its 3rd workshop on Innovative Memory technologies
CEA-Leti, a leading global research center committed to creating and commercializing innovation in micro- and nanotechnologies, is hosting its third workshop on innovative memory technologies at MINATEC on Wednesday, June 29, 2011.
April 14, 2011
M
Magnetic RAM comes of age
A team of Spanish and French scientists have finally found a way of reading and writing magnetic memory without using magnetic fields and coils of wire. Instead of using a magnetic "head" to read and write ever-shrinking domains on hard drive platters and tapes, this new approach can read and write magnetic storage using standard electrical circuits. Most importantly, though, this new kind of magnetic storage looks like it could be constructed using standard computer chip processes.
August 2, 2011
Magnetic vortices on nanostructured thin-film for data storage
Tiny magnets organize themselves in vortices in the researchers' mini disks. The individual magnets can twist either in a clockwise or a counterclockwise direction in the disk. These two different states can be used in data processing just like switching the electricity "on" and "off" in conventional computers. In contrast to conventional memory storage systems, these magnetic vortices can be switched by the electrons' intrinsic spin and with far less power consumption.
March 14, 2011
MEMO Electronics
offers contactless memory modules for data storage under extreme conditions.
Provides Products
Memory Express
Specialist supplier of memory, processor upgrades for PCs and printers.
Provides Products
Memory for Less
Specializes in memory upgrades for over 10,000 models of Servers, Notebooks, Desktops printers.
Provides Products
Memory Suppliers
Providers of High Quality Memory at Great Prices for PCs, Macs, Laptops, Digital Cameras, and Printers.
Provides Products
MemoryX Computer
Distributor of memory for all major systems.
Provides Products
Micro Memory Bank, Inc.
designs, manufactures, and distributes computer memory modules for a wide range of computer systems.
Provides Products
Micron to tap IBM chip-stacking tech for fast memory
IBM and Micron Technology are beginning to produce a new memory chip based on technology designed to boost memory speeds 15-fold.
November 29, 2011
Microsoft continues to look beyond the glass screen with new touch experiments
At the ACM Symposium on User Interface Software and Technology (UIST) in Santa Barbara, California this week, Microsoft Researchers are showing off some experimental touch interaction projects that look beyond the flat glass touchscreen and move into different areas where touch-sensitivity could be employed.
October 17, 2011
Micron Collaborates with A*STAR on Next-Generation Memory Technology
Micron Technology, Inc., and Singapore's A*STAR Data Storage Institute jointly announced today that the two companies have entered into an agreement to collaborate on the development of spin transfer torque magnetic random access memory, a promising alternative non-volatile memory technology for next-generation storage.
October 28, 2011
Micron streaks away with PCIe flash
PCIe flash is for servers needing minimal I/O delays in fetching data to memory. Instead of having that data on hard disk drives, which have millisecond delivery times, the servers can stir on the cards attached to the PCIe bus and have the data in DRAM in microseconds.
June 2, 2011
Micron Technology
Manufactures of high-performance memory.
Provides Products
Minnesota Memory, Inc.
Offers memory on desktops, laptops, notebooks, servers, workstations and printers.
Provides Products
MoreMemory.com
Offers memory for name brand computer, and digital camera.
Provides Products
Molecule-based memory devices edge closer
In a step towards realizing ultrahigh-density storage devices based on individual molecules behaving as magnets, researchers in Japan have developed a candidate building block — a supramolecular ferromagnet, which is a caged molecule with magnetic properties ("Ferromagnetic Spin Coupling between Endohedral Metallofullerene La@C82 and a Cyclodimeric Copper Porphyrin upon Inclusion"). The research team was led by Takuzo Aida at the RIKEN Advanced Science Institute, Wako, and Kentaro Tashiro at the National Institute for Materials Science, Tsukuba.
September 16, 2011
Mosel Vitelic
designs, manufactures, and markets DRAM, VRAM, and SRAM.
Provides Products
MSI A75MA-G55 AMD Socket FM1 Motherboard Review
MSI has been making mainstream and enthusiast level motherboards for 25 years now, and have never failed to bring a quality product to the table! With a little bit of luck today will be no different. If you haven't guessed it yet, we will be taking a look at the MSI A75MA-G55 motherboard. The MSI A75MA-G55 motherboard is built for the new AMD A Series APU's and uses the new FM1 socket design.
July 27, 2011
Mushkin Computer Memory
Offers memory from virtually every computer memory module.
Provides Products
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Nanowire measurements study could improve computer memory
A recent study at the National Institute of Standards and Technology (NIST) may have revealed the optimal characteristics for a new type of computer memory now under development ("Fabrication, characterization and simulation of high performance Si nanowire-based non-volatile memory cells"). The work, performed in collaboration with researchers from George Mason University (GMU), aims to optimize nanowire-based charge-trapping memory devices, potentially illuminating the path to creating portable computers and cell phones that can operate for days between charging sessions.
May 19, 2011
New 'FeTRAM' is promising computer memory technology
Researchers are developing a new type of computer memory that could be faster than the existing commercial memory and use far less power than flash memory devices.
September 27, 2011
New flash RAM tech promises 99% energy drop
Nanotechnology boffins are exploring a new type of nonvolatile memory that not only has the potential of being faster than today's flash RAM, but also requires 99 per cent less energy.
September 27, 2011
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OCZ Technology
Performance Computer Memory Manufacturer, High End, Lifetime Warranty, Direct Support, Memory Products.
Provides Products
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P67 Memory Kit Roundup Review
To start off this show I will look at the Corsair Vengeance 8GB kit. Why Corsair first you ask ? Well they come first alphabetically! The Vengeance series come in a retail box that shows the modules installed in a system on the front panel with the system compatibility listing on the bottom right showing these modules are at home in both Intel and AMD systems.
March 30, 2011
PCM prototype beats PCIe flash
University of California, San Diego (UCSD) student boffins in the Computer Science and Engineering department at the Jacobs School of Engineering built their Moneta device using Phase Change Memory (PCM) chips from Micron. These use electricity to change the state of a Chalcogenide alloy from poly-crystalline to amorphous and back again.
June 3, 2011
PNY Techonologies
manufacturer of computer memory, card readers, flash storage, graphics cards, and CD media for OEMs and consumers.
Provides Products
Pricing of RAM to plunge, analyst says
The price of DDR3 memory used in laptops, desktops and servers will drop over the next two months as memory companies try to clear out excess inventory in a slowing PC market, IHS iSuppli said on Monday.
August 30, 2011
Princeton Technology, Inc.
offering several types of computer memory modules for OEMs and resellers.
Provides Products
R
Rambus
has provided leading chip and system companies with chip-to-chip interface solutions that enable higher performance and system bandwidth for a broad range of consumer electronic, computing and networking applications.
Provides Products
RAMCHECK Memory Testers
Memory Testers for SDRAM, DDR, RAM, DIMMS, and other computer memory devices, at affordable prices.
Provides a Service
Ramseeker
Tracks memory prices from over 50 memory vendors on 20 different memory types for the Apple Macintosh Computer.
Provides a Service
RDRAM.com
gives information about DRAM components, RIMM modules, and Rambus memory.
Provides Information
Researchers develop fully functional flexible memory
The team of Professor Keon Jae Lee (Department of Materials Science and Engineering, KAIST) has developed fully functional flexible non-volatile resistive random access memory (RRAM) where a memory cell can be randomly accessed, written, and erased on a plastic substrate.
November 3, 2011
Researchers Develop Piezoelectric Nanowire-Based Memory Devices
Researchers at the School of Materials Science and Engineering at the Georgia Institute of Technology have developed piezoelectrically modulated resistive memory (PRM) devices using zinc oxide nanowires.
July 29, 2011
Researchers watch a next-gen memory bit switch in real time
For the first time, engineering researchers have been able to watch in real time the nanoscale process of a ferroelectric memory bit switching between the 0 and 1 states.
November 18, 2011
Resistive memory built with exposed, planar nanowires provides insights into resistive switching
The current standard for non-volatile or 'flash' memory involves relatively complex structures. Much simpler is resistive memory, which consists of a single continuous strip of material between metal electrodes. The resistance across this material is forced low or high by applying 'set' or 'reset' voltages.
June 13, 2011
Rocky Mountain Ram
manufactures memory upgrades for all major brands of computer, workstations, and printers.
Provides Products
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S.A. Technologies, Inc.
Memory for all PCs, MACs, Notebooks, Printers, Samplers, Fax Machines, RAID Controllers, Cameras and MP3 Players.
Provides Products
Samsung Announces Mass Production of Industry's First 20nm-Class DDR3
Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it has begun operations of its new Line-16 memory semiconductor fabrication facility, which will provide the industry's largest production capacity. It also announced the start of mass production of the industry's first double data rate-3 (DDR3) dynamic random access memory (DRAM) based on 20 nanometer (nm) class* process technology, which offers significant improvements to productivity and reduces energy consumption. The announcements were made during a ceremony at Samsung's Nano City Complex in Hwaseong, Gyeonggi Province, where the new Line-16 is located.
September 22, 2011
Samsung Begins Mass Producing 30nm-class, 32-Gigabyte Memory Modules for Green IT Systems
Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it is the first in the industry to start mass producing 32 gigabyte (GB) memory modules, essential for cloud computing and advanced server systems, using 30 nanometer (nm) class four gigabit (Gb) DDR3 DRAM chips.
May 31, 2011
Samsung Develops 30nm-Class 32GB Green DDR3 For Next-Generation Servers
Samsung Electronics Co., Ltd. announced the development of 32 gigabyte (GB) double data rate-3 (DDR3) registered dual Inline memory modules (RDIMMs) that use three dimensional (3D) through silicon via (TSV) package technology.
August 18, 2011
Samsung's 30 nm Class DDR3 Memory and Microsoft's Data Platform to Develop Energy Saving Server Systems
Samsung Electronics and the Microsoft Technology Centre have come together to create an energy saving server system. This development is part of their server systems evaluation, which is based on providing a match between performance and power conservation.
September 27, 2011
Samsung's 30nm - class DDR3 DRAM Modules Consume Less Energy
Samsung Electronics America, a company that manufactures digital consumer electronics, released 30 nm-class DDR3 synchronous dynamic random - access memory (DRAM) modules, which are rapid and energy efficient and used in PCs.
June 13, 2011
Samsung's Line-16 Memory Fabrication Facility Begins Operations
Samsung Electronics has commenced operations at its 198,000 sq.m Line-16 Memory Semiconductor fabrication facility. Construction of the facility was started during May 2010 and installations were completed by May 2011.
September 26, 2011
SEMATECH, 4DS to Collaborate on Development of Non-Volatile Memory Technology
4DS, a Silicon Valley company that develops RRAM technology, has enrolled in SEMATECH's Front End Processes (FEP) to collaborate on projects in non-volatile memory technology development.
April 18, 2011
Semiconductor IP startup Uniquify granted patent related to DDR2/DDR3 timing
Silicon Valley semiconductor IP start-up Uniquify is granted a United States patent covering its solution used in designing DDR (double data rate) memory controllers that satisfy challenging timing requirements. Uniquify says its patented 'Self-Calibrating Logic' (SCL) permits SoC (system-on-chip) designs that use Uniquify's memory controller IP (intellectual property) to automatically fine-tune critical timing parameters after the SoCs are installed in system boards.
March 21, 2011
Sidense's 1T-Fuse-based OTP Macros at 130nm Meet IP9000 Assessment Requirements
A provider of logic non-volatile memory (LNVM) one-time programmable (OTP) memory IP cores for utilization in standard-logic CMOS processes, Sidense has declared that its SiPROM 1T-Fuse OTP macro products available at 130nm has passed the TSMC's IP9000 assessment requirements.
August 4, 2011
Sidense's OTP Macros for 90 nm LP Process Meet IP9000 Assessment Requirements
Sidense, a provider of logic one-time programmable (OTP), non-volatile memory (LNVM) IP cores, has declared that its SiPROM 1T-Fuse OTP macro portfolio for the 90 nm low-power (LP) process has fulfilled the requirements of IP9000 assessment program of TSMC.
September 15, 2011
Single-chip DIMM offers low-power replacement for sticks of RAM
Invensas, a subsidiary of chip microelectronics company Tessera, has discovered a way of stacking multiple DRAM chips on top of each other. This process, called multi-die face-down packaging, or xFD for short, massively increases memory density, reduces power consumption, and should pave the way for faster and more efficient memory chips.
September 7, 2011
Smart Modular Technologies
manufactures computer memory modules, compact flash cards, voltage regulators, wireless communications devices, and wireline communication sub-systems.
Provides Products
SMS Group Incorporated
manufacturer of memory modules including 168-pin SDRAM, DIMMS, EDO, and Fast Page SIMMS.
Provides Products
Stanford Scientists Develop Two Memory Structures Using Carbon Nanotubes
A group of Stanford University scientists have developed nanoscale variants of two advanced memory technologies from carbon nanotubes.
June 29, 2011
Storing quantum information permanently
Quantum memory is one of the basic building blocks needed for realizing a quantum computer one day. Atac Imamoglu, a professor of quantum electronics, and Renato Renner, a professor of theoretical physics, examined the issue of whether there can be long-term memory for quantum information at all using numerical models and theoretical analyses. In doing so, they studied one of the most promising candidates for storing quantum information today: so-called topological memory.
July 26, 2011
Swissbit
in Switzerland has more than 12 years experience in development, design, manufacturing and testing of Memory Products.
Provides Information
Synopsys's Declares Availability of DesignWare AEON NVM IP for 180 nm Processing Technologies
Synopsys has made DesignWare AEON Non-Volatile Memory (NVM) IP available for multiple process technologies of 180nm.
June 29, 2011
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The Chip Merchant
Offers a wide variety of memory modules for all types of computers, printers and laptops.
Provides Products
The PC Technology Guide
Outlines the components of the PCs memory architecture and the various memory types and packaging.
Provides Products
The Memory Tester Company
Offers solution to memory module testing at affordable prices.
Provides Products
U
UniRAM Technology
designs, develops, and licenses memory solutions for system on a chip applications and stand alone memory products.
Provides a Service
V
Vanguard International Semiconductor Corp.
manufactures memory products.
Provides Products
ViewSonic VX2450wm-LED
The ViewSonic VX2450wm-LED is a thin LED monitor with pretty good performance and a rock-bottom price.
July 21, 2011
Viking Components
offering memory for desktops, laptops, printers, enterprise systems, and a line of flash memory.
Provides Products
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Warmed-up organic memory transistor has larger memory capacity
Scientists show that non-volatile memory made from a sandwich of silver nanoparticle-laced plastic retains its on/off state over a wider voltage range when operating at toasty temperatures.
July 29, 2011
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